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NTJD4152P
ELECTRICAL CHARACTERISTIC S (T J =25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
V (BR)DSS
V GS = 0 V, I D = ? 250 m A
? 20
V
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = ? 16 V
T J = 25 ° C
T J = 125 ° C
? 1.0
? 1.0
? 5.0
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 4.5 V
0.03
1.0
m A
ON CHARACTERISTICS (Note 3)
V DS = 0 V, V GS = ± 12 V
6.0
Gate Threshold Voltage
Drain ? to ? Source On Resistance
V GS(TH)
R DS(on)
V GS = V DS , I D = ? 250 m A
V GS = ? 4.5 V, I D = ? 0.88 A
? 0.45
215
? 1.2
260
V
m W
V GS = ? 2.5 V, I D = ? 0.71 A
V GS = ? 1.8 V, I D = ? 0.20 A
345
600
500
1000
Forward Transconductance
g FS
V DS = ? 10 V, I D = ? 0.88 A
3.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
155
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = ? 20 V
25
18
Total Gate Charge
Q G(TOT)
2.2
nC
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q GS
Q GD
V GS = ? 4.5 V, V DS = ? 10 V,
I D = ? 0.88 A
0.5
0.65
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
5.8
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DD = ? 10 V,
I D = ? 0.5 A, R G = 20 W
6.5
13.5
3.5
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = ? 0.48 A
T J = 25 ° C
T J = 125 ° C
? 0.8
? 0.66
? 1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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